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Volumn 57, Issue 4, 1999, Pages 323-329
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Photoconductivity and defect levels in ZnxCd1-xSe with (x = 0.5, 0.55) crystals
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Author keywords
Annealing; Gold surface barriers; Schottky devices
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Indexed keywords
ANNEALING;
CAPACITANCE MEASUREMENT;
CRYSTAL DEFECTS;
DIFFUSION IN SOLIDS;
ELECTRIC CHARGE;
ELECTRIC POTENTIAL;
ENERGY GAP;
GAS ABSORPTION;
GOLD;
LEAKAGE CURRENTS;
PHOTOCONDUCTIVITY;
PHOTOCURRENTS;
PHOTOCAPACITANCE;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 3242753391
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0248(98)00154-8 Document Type: Article |
Times cited : (30)
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References (25)
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