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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1460-1463

Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study

(5) Garino, Yiuri a Teraji, Tokuyuki a Koizumi, Satoshi a Koide, Yasuo a Ito, Toshimichi b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Diamond; Electronic transfer; High field effects; Schottky barriers

Indexed keywords

CHARGING EFFECT; DIAMOND ELECTRONICS; ELECTRICAL TRANSIENTS; HIGH VOLTAGE; HIGH-FIELD; NEGATIVE CURRENTS; POSITIVE CURRENT; POWER LAW; REVERSE BIAS VOLTAGE; REVERSE CHARACTERISTICS; REVERSE CURRENTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SHALLOW TRAPS; STRETCHED EXPONENTIAL; TRAPPING/DETRAPPING;

DIODES; SCHOTTKY BARRIER DIODES;

DIAMONDS;

EID: 77954272862 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200925448 Document Type: Article

Times cited : (2)

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