Novel 4-mask process for InGaZnO TFTs with self-aligned technique using direct patterned electrodes and inkjet

IDW '08 - Proceedings of the 15th International Display Workshops

Volumn 3, Issue , 2008, Pages 1631-1632

  Takahashi, R ^a   Itagaki, M ^a   Miura, N ^a   Iijima, R ^a   Shinkai, Y ^a  

^a BROTHER INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DIRECT-PATTERNING; MASK PROCESS; ON/OFF CURRENT RATIO; PATTERNED ELECTRODE; SELF-ALIGNED;

ELECTRODES;

THRESHOLD VOLTAGE;

EID: 77954098447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M.Hirano and H. Hosono, Nature, 432, 488 (2004).
2. J. K. Jeong, J.H.Jeong, J. H. Choi, J. S. Tm, S. H. Kim, H. W. Yang, K. N. Kang, K. S. Kim, T. K. Ahn, H-J. Chung, M. Kim, B. S. Gu, J-S. Park, Y-G. Mo, H. D. Kim, and H. K. Chung. S1D 08 Digest, p. 1 (2008).
3. SL Brandow, MS Chen, R. Aggarwal, CS Dulcey, JM Calvert, and WJ Dressick, Langmuir 15, 5429 (1999).
4. Joo Hyon Noh, Chang Su Kim, Seung Yoon Ryu, and Sung Jin Jo, Jpn. J. Appl. Phys. 46, 4096 (2007).
5. Y. Okada, A. Ban, M. Okamoto, W. Oka, Y. Matsuda, S. Shibahara. SID 02 Digest, p. 1204 (2002).
6. Y. Kuo, H. Nominanda, and G. Liu, J. Kor. Phys. Soc. 48, S92 (2006).