Detective quantum efficiency, modulation transfer function and energy resolution comparison between CdTe and silicon sensors bump-bonded to XPAD3S

Journal of Synchrotron Radiation

Volumn 17, Issue 4, 2010, Pages 486-495

  Medjoubi, Kadda ^a   Bucaille, Thierry ^a   Hustache, Stéphanie ^a   Bérar, Jean François ^b   Boudet, Nathalie ^b   Clemens, Jean Claude ^c   Delpierre, Pierre ^c   Dinkespiler, Bernard ^c  

^a SYNCHROTRON SOLEIL   (France)

^b D2AM CRG/F   (France)

^c CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

CdTe sensor; DQE; MTF; silicon sensor; XPAD

Indexed keywords

CDTE; CDTE SENSOR; CONTRAST TRANSFER; COUNT RATES; DETECTIVE QUANTUM EFFICIENCY; DQE; DYNAMIC RANGE; ENERGY RESOLUTIONS; FLIP CHIP TECHNOLOGIES; FRAME RATE; IBM TECHNOLOGIES; IMAGING PERFORMANCE; MODULATION TRANSFER FUNCTION; NYQUIST FREQUENCY; PHOTON COUNTING; PHOTON ENERGY; PIXEL SIZE; SCHOTTKY CONTACTS; SILICON MODULES;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; MODULATION; MULTIPHOTON PROCESSES; NEON; OPTICAL TRANSFER FUNCTION; PARTICLE DETECTORS; PHOTONS; PIXELS; SILICON SENSORS; TELLURIUM COMPOUNDS; TRANSFER FUNCTIONS; X RAY DIFFRACTION; X RAYS;

QUANTUM EFFICIENCY;

EID: 77954073097     PISSN: 09090495     EISSN: 16005775     Source Type: Journal    
DOI: 10.1107/S0909049510013257     Document Type: Article

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