Selectivity, stability and repeatability of In2O3 thin films towards NOx at high temperatures (≥500 °C)

Sensors and Actuators, B: Chemical

Volumn 148, Issue 1, 2010, Pages 126-134

  Kannan, S ^a   Steinebach, H ^b   Rieth, L ^a   Solzbacher, F ^a,b  

^a Department of Electrical and Computer Engineering   (United States)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

FT IR; High temperature; Indium oxide; NOx sensor; Selectivity; Stability

Indexed keywords

CARRIER GAS; GAS-PHASE REACTIONS; HIGH OPERATING TEMPERATURE; HIGH TEMPERATURE; INDIUM OXIDE; SENSOR RESPONSE; SENSOR SELECTIVITY; TARGET GAS; TEST GAS; THIN FILM SENSORS;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GASES; INDIUM; OXYGEN; PHASE INTERFACES; STABILITY; THIN FILMS; VAPOR DEPOSITION; WAVELET TRANSFORMS;

SENSORS;

EID: 77953912294     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.04.026     Document Type: Article

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