Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films

Sensors and Actuators, B: Chemical

Volumn 68, Issue 1, 2000, Pages 249-253

  Steffes, H ^a   Imawan, C ^a   Solzbacher, F ^a   Obermeier, E ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FILM PREPARATION; MAGNETRON SPUTTERING; MICROSTRUCTURE; NITROGEN OXIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

AIR QUALITY CONTROL; INDIUM OXIDE THIN FILM; METAL OXIDE;

CHEMICAL SENSORS;

EID: 0034249021     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00437-8     Document Type: Article

References (6)

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2. 2 detection. Proc. of the 11th EUROSENSORS, Warsaw, Poland, September 21-24:1997;1181-1184.
3. x sensors for exhaust monitoring. Proc. of the 3rd IMCS, Cleveland, USA:1990;334-337.
4. Muranaka S., Hirooka H., Bando Y. Influence of oxygen pressure on the structure of reactively deposited indium oxide films. J. Mater. Chem. 3(3):1993;237-240.
5. 3-Dünnschichten für Anwendungen in der Gas-Mikrosensorik, PhD thesis, Department of Electrical Engineering, Technical University Berlin, Germany, 1997, pp. 76-77.
6. Ryu J.S., Watanabe Y., Takata M. Correlation between gas sensing properties and preferential orientations of sputtered tin oxide films. J. Ceram. Soc. Jpn. 100:1992;1165-1168.