Vertical-coupled SiGe double quantum dots

Electronics Letters

Volumn 46, Issue 13, 2010, Pages 940-941

  Li, C B ^a,d   Yamahata, G ^a   Xia, J S ^b   Mizuta, H ^c   Oda, S ^a   Shiraki, Y ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT COUPLING; DOUBLE QUANTUM DOTS; HOLE TRANSPORTS; LOW TEMPERATURES; SIDE GATE;

CURRENT VOLTAGE CHARACTERISTICS; QUANTUM CHEMISTRY; SILICON ALLOYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77953827005     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.0494     Document Type: Article

References (10)

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