Charge-transfer absorption band in Zn1-xMx O (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure

Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

  Gilliland, S G ^a   Sans, J A ^b   Sanchez Royo J F ^a   Almonacid, G ^a   Segura, A ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; BAND GAPS; BURSTEIN-MOSS SHIFT; CHARGE TRANSFER BANDS; CHARGE TRANSFER TRANSITIONS; CHARGE-TRANSFER ABSORPTION; CRYSTAL-FIELD-SPLIT; EDGE BANDS; FREE CARRIERS; GA DOPING; GA-DOPED; INTERNAL TRANSITIONS; LOCALIZED LEVELS; LOW PRESSURE COEFFICIENT; NEGATIVE PRESSURE COEFFICIENT; OPTICAL ABSORPTION MEASUREMENT; OPTICAL MEASUREMENT; PHOTOCONDUCTIVITY SPECTRUM; PHOTON ENERGY; PRESSURE COEFFICIENTS; SHIFT-AND;

ABSORPTION; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRON MOBILITY; ENERGY GAP; GALLIUM; ION EXCHANGE; MANGANESE; MANGANESE COMPOUNDS; OPTICAL DATA PROCESSING; PHOTOCONDUCTIVITY; ZINC; ZINC COMPOUNDS;

COBALT;

EID: 77953745826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3454243     Document Type: Article

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