Nearly massless electrons in the silicon interface with a metal film

Physical Review Letters

Volumn 104, Issue 24, 2010, Pages

  Kim, Keun Su ^a   Jung, Sung Chul ^a   Kang, Myung Ho ^a   Yeom, Han Woong ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED PHOTOEMISSION; DEVICE MATERIALS; EFFECTIVE MASS; HOLE BANDS; INVERSION LAYER; LEAD FILMS; LINEAR DISPERSION; MASSLESS ELECTRONS; METAL FILM; REPULSIVE INTERACTIONS; SI SUBSTRATES; SILICON INTERFACE; SILICON-BASED; SURFACE BANDS;

METALLIC FILMS; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; THIN FILM DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953692910     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.246803     Document Type: Article

References (27)

1. R.F. Service, Science 323, 1000 (2009). SCIEAS 0036-8075 10.1126/science.323.5917.1000
2. K.S. Novoselov, Nature (London) 438, 197 (2005); NATUAS 0028-0836 10.1038/nature04233
3. Y. Zhang, Nature (London) 438, 201 (2005). NATUAS 0028-0836 10.1038/nature04235
4. T. Ohta, Phys. Rev. Lett. 98, 206802 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.206802
5. L. Li, Science 321, 547 (2008). SCIEAS 0036-8075 10.1126/science.1158908
6. D. Hsieh, Nature (London) 452, 970 (2008). NATUAS 0028-0836 10.1038/nature06843
7. Y. Xia, Nature Phys. NPAHAX 1745-2473 5, 398 (2009). 10.1038/nphys1274
8. Y.L. Chen, Science 325, 178 (2009). SCIEAS 0036-8075 10.1126/science. 1173034
9. J.H. Davies, The Physics of Low-Dimensional Semiconductors (Cambridge University Press, New York, 1998).
10. P.Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 2005).
11. N.J. Speer, S.-J. Tang, T. Miller, and T.C. Chiang, Science 314, 804 (2006). SCIEAS 0036-8075 10.1126/science.1132941
12. M.H. Upton, T. Miller, and T.C. Chiang, Phys. Rev. B PRBMDO 1098-0121 71, 033403 (2005). 10.1103/PhysRevB.71.033403
13. P. Moras, Phys. Rev. B PRBMDO 1098-0121 80, 205418 (2009). 10.1103/PhysRevB.80.205418
14. S. Brochard, Phys. Rev. B PRBMDO 0163-1829 66, 205403 (2002). 10.1103/PhysRevB.66.205403
15. P. Cudazzo, G. Profeta, and A. Continenza, Surf. Sci. 602, 747 (2007). SUSCAS 0039-6028 10.1016/j.susc.2007.12.001
16. W.H. Choi, H. Koh, E. Rotenberg, and H.W. Yeom, Phys. Rev. B PRBMDO 1098-0121 75, 075329 (2007). 10.1103/PhysRevB.75.075329
17. T. Zhang, Nature Phys. NPAHAX 1745-2473 6, 104 (2010). 10.1038/nphys1499
18. S. Qin, J. Kim, Q. Niu, and C. -K. Shih, Science 324, 1314 (2009). SCIEAS 0036-8075 10.1126/science.1170775
19. See supplementary material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.104.246803 for the sample characterization and the quantification of the effective mass.
20. R.I.G. Uhrberg, Phys. Rev. Lett. 52, 2265 (1984). PRLTAO 0031-9007 10.1103/PhysRevLett.52.2265
21. W. Mönch, Semiconductor Surfaces and Interfaces (Springer, Berlin, 2001).
22. S.N. Takeda, N. Higashi, and H. Daimon, Phys. Rev. Lett. 94, 037401 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.94.037401
23. G. Kresse and J. Furthmüller, Phys. Rev. B PRBMDO 0163-1829 54, 11169 (1996). 10.1103/PhysRevB.54.11169
24. C. -H. Hsu, F. -C. Chuang, M.A. Albao, and V. Yeh, Phys. Rev. B PRBMDO 1098-0121 81, 033407 (2010). 10.1103/PhysRevB.81.033407
25. C. Liu, I. Matsuda, R. Hobara, and S. Hasegawa, Phys. Rev. Lett. 96, 036803 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96.036803
26. K.N. Altmann, Phys. Rev. B PRBMDO 0163-1829 64, 035406 (2001). 10.1103/PhysRevB.64.035406
27. H.J. Jeong, H.W. Yeom, and S.M. Jeong, Phys. Rev. B PRBMDO 1098-0121 77, 235425 (2008). 10.1103/PhysRevB.77.235425