Electronic structure of substitutionally Mn-doped graphene

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Wu, M ^a   Cao, C ^a,b   Jiang, J Z ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARBON ATOMS; CHARGE-TRANSFER INSULATORS; CHEMICAL ENVIRONMENT; CRYSTAL-FIELD-SPLIT; D ORBITALS; DOPING DENSITIES; MN-DOPED; ON-SITE ENERGY;

ANTIFERROMAGNETISM; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERROMAGNETISM; GRAPHENE; GRAPHITE; ION EXCHANGE; MAGNETIC MOMENTS; MANGANESE COMPOUNDS;

MANGANESE;

EID: 77953579305     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/6/063020     Document Type: Article

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