Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 4171-4175

  Higashi, S ^a   Abe, D ^a   Inoue, S ^a   Shimoda, T ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Density of interface trap states; ECR; PECVD; SiO2 Si interface

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTRON CYCLOTRON RESONANCE; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; SUBSTRATES;

INTERFACE TRAP STATE; LOW TEMPERATURE FORMATION; SILICA SILICON INTERFACE;

INTERFACES (MATERIALS);

EID: 0035358965     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4171     Document Type: Article

References (13)