The next phase for immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 I, Issue , 2006, Pages

  Sewell, Harry ^a   Mulkens, Jan ^b   McCafferty, Diane ^a   Markoya, Louis ^a   Streefkerk, Bob ^b   Graeupner, Paul ^c  

^a ASML US Inc   (United States)

^b ASML   (Netherlands)

^c CARL ZEISS SMT AG   (Germany)

Author keywords

2nd generation immersion fluid; High refractive index; Hyper numerical aperture

Indexed keywords

IMAGING SYSTEMS; OPTICAL SYSTEMS; PHOTORESISTS; REFRACTIVE INDEX; SCANNING;

2ND-GENERATION IMMERSION FLUID; HIGH REFRACTIVE INDEX; HYPER-NUMERICAL APERTURE;

PHOTOLITHOGRAPHY;

EID: 33745798404     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657574     Document Type: Conference Paper

References (4)

1. Wim de Boeij, et.al., Enabling the 45nm node by hyper-NA polarized lithography, SPIE Vol. 6154, 2006.
2. Sewell, et.al., 32nm node technology development using interference immersion lithography, SPIE Vol.5753, 2005.
3. nd International Symposium on Immersion Lithography, September 2005, Brugges, Belgium.
4. Bob Streefkerk, ei.al.,Immersion Defects Capabilities, SPIE Vol. 6154, 2006