Analysis and characterization of contamination in EUV reticles

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Okoroanyanwu, Uzodinma ^a   Dittmar, Kornelia ^b   Fahr, Torsten ^b   Wallow, Tom ^a   LaFontaine, Bruno ^a   Wood, Obert ^a   Holfeld, Christian ^b   Bubke, Karsten ^b   Peters, Jan Hendrik ^c  

^a IBM MICROELECTRONICS   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c AMTC   (Germany)

Author keywords

Auger Electron Spectroscopy; EUV reticle contamination; Grazing Incidence Reflectance Fourier Transform Infrared Spectroscopy; Raman spectroscopy

Indexed keywords

ADVANCED LIGHT SOURCE; ALBANY NANOTECH; ANALYSIS AND CHARACTERIZATION; ANALYTICAL TECHNIQUES; CARBON CONTAMINATION; CONTAMINANT FILMS; EUV RADIATION; EUV REFLECTIVITY; FTIR; FULL-FIELD; GRAZING INCIDENCE; IMAGING PERFORMANCE; INFRA RED; LASER INDUCED; LAWRENCE BERKELEY NATIONAL LABORATORY; MICRO-EXPOSURE TOOL; MOLECULAR CONTAMINATION; NANOSCALE SCIENCE; NEW YORK; REFLECTOMETRY; SEM; SEMATECH; STATE UNIVERSITY OF NEW YORK; SURFACE OXIDATIONS; SURFACE SCANNING;

AUGERS; CARBONIZATION; CHEMICAL SPECIATION; CONTAMINATION; ELECTRONS; FOURIER TRANSFORMS; HYDROCARBONS; IMAGING TECHNIQUES; IMPURITIES; INFRARED SPECTROSCOPY; LIGHT SOURCES; OPTICAL INSTRUMENTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REFLECTION; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; THICK FILMS; WAVELET TRANSFORMS;

AUGER ELECTRON SPECTROSCOPY;

EID: 77953370948     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847269     Document Type: Conference Paper

References (11)

1. A.E. Yakshin, E. Louis, E.L.G. Maas, F. Bijkerk, R. Klein, F. Scholze, P. Zalm, F. Stietz, M. Wedowski, S. Muellender, B. Mertens, H. Meiling, " Protection of Mo/Si Multilayers with a Carbon Capping Layer," EVUL Workshop, Matsue, Japan, 29-31 October (2001);
2. S. Bajt, H.N. Chapman, N. Nguyen, J. Alameda, J.C. Robinson, M. Malinowski, E. Gullikson, A. Aquila, C. Tarrio, S. Grantham, "Design and Performance of Capping Layers for Extreme-Ultraviolet Mirrors," Appl. Opt. vol. 42(28), pp. 5750-5758 (2003);
3. 2," 6th EUVL Symposium, San diego, Nov. 7-9 (2005);
4. S. Yulin, N. Benoit, T. Feigl, N. Kaiser, S. Hill, T. Lucartoto, F. Dollar, E. Gullikson, M. Fang, M. Chandhok, M. Shell, "Mo/Si Multilayers with Enhanced Capping Layers, 5th EUVL Symposium, Barcelona, Oct. 15-18 (2006)
5. S. Yulin, N. Benoit, T. Feigl, N. Kaiser, S. Hill, T. Lucartoto, F. Dollar, E. Gullikson, M. Fang, M. Chandhok, M. Shell, "Mo/Si Multilayers with Enhanced Capping Layers, 5th EUVL Symposium, Barcelona, Oct. 15-18 (2006);
6. S. Bajt. H.N. Chapman, N. Nguyen, J. Alameda, J.C. Robinson, M. Malinowski, E. Gullikson, A. Aquila, C. Tarrio, S. Grantham, "Design and Performance of Capping Layers for EUV Multilayer Mirrors," Proc. SPIE, vol. 5037, pp. 236-248 (2003).
7. U. Okoroanyanwu, A. Jiang, K. Dittmar, T. Fahr, T. Laursen, O. Wood, K. Cummings, C.Holfeld, J.-H. Peters, B. La Fontaine, E. Gullikson. "Monitoring Reticle Molecular Contamination on ASML's Alpha Demo Tool," Proc. of SPIE This Proceedings (2010)
8. Y.-J. Fen, L. Yankulin, A. Antohe, R. Garg, P. Thomas, C. Mbanaso, A. Wuest, F. Goodwin, S. Huh, P. Nalleau, K Goldberg, I. Mochi, G. Denbeaux, "Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effects on Imaging," Proc. SPIE, vol. 7271, pp. 72713U-1-72713U-9 (2009)
9. U. Okoroanyanwu, A. Jiang, K. Dittmar, T. Fahr, T. Laursen, O. Wood, K. Cummings, C.Holfeld, J.-H. Peters, B. La Fontaine, E. Gullikson. "Monitoring Reticle Molecular Contamination on ASML's Alpha Demo Tool," Proc. of SPIE This Proceedings (2010)
10. 2, etc.) can occur with distinct transition probabilities. The Auger electron energies are characteristic of the target material and are independent of the incident beam energy.
11. 2,3 indicates the L-shell's (2p orbital level) location of the Auger electron, i.e., the electron that leaves the ion. Similarly, in the KVV transition the K indicates the K shell (1s orbital level) location of core hole, V indicates the valence shell origin of relaxing electron, and V indicates the valence shell initial location of the Auger electron.