Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories

IET Computers and Digital Techniques

Volumn 4, Issue 3, 2010, Pages 211-226

  Guillemenet, Y ^a   Torres, L ^a   Sassatelli, G ^a  

^a LIRMM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AREA OVERHEAD; DESIGN ARCHITECTURE; DYNAMIC RE-CONFIGURATION; IN-FIELD; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNELLING JUNCTION; NON-VOLATILE; NONVOLATILITY; POWER CONSUMPTION; RUN-TIME RECONFIGURABLE; RUNTIMES; STATIC RANDOM ACCESS MEMORY; WRITE OPERATIONS;

DYNAMIC MODELS; LOGIC GATES; MACHINE DESIGN; MAGNETIC MATERIALS; MAGNETIC STORAGE;

RANDOM ACCESS STORAGE;

EID: 77953340455     PISSN: 17518601     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-cdt.2009.0019     Document Type: Article

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