Magnetic shadow RAM

7th Annual Non-Volatile Memory Technology Symposium, NVMTS

Volumn , Issue , 2006, Pages 45-48

  Hass, K J ^a   Donohoe, G W ^a   Hongt, Y K ^b   Choi, B C ^c   Degregorio, K ^d   Hayhurst, R ^d  

^a UNIVERSITY OF IDAHO   (United States)

^b UNIVERSITY OF ALABAMA   (United States)

^c UNIVERSITY OF VICTORIA   (Canada)

^d AMERICAN SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; COMPUTATION THEORY; LOGIC PROGRAMMING; MAGNETIC RECORDING; MAGNETIC STORAGE; MAGNETISM; MRAM DEVICES; NONVOLATILE STORAGE; TUNNEL JUNCTIONS;

COMPUTATIONAL LOGIC; DOUBLE GATE TRANSISTOR; LOW-POWER CONSUMPTION; MAGNETIC TUNNEL JUNCTION; MICROMAGNETIC STRUCTURE; PHYSICAL LAYOUT; RADIATION TOLERANCES; WRITE ENDURANCES;

RANDOM ACCESS STORAGE;

EID: 46849092181     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2006.378874     Document Type: Conference Paper

References (23)

1. G. A. Prinz, "Spin-polarized transport," Physics Today, pp. 58-63, Apr. 1995.
2. _, "Magnetoelectronics," Science, vol. 282, pp. 1660-1663, Nov. 27, 1998.
3. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, "Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions," Physical Review Letters, vol. 74, no. 16, pp. 3273-3276, Apr. 1995.
4. T. Miyazaki and N. Tezuka, "Spin polarized tunneling in ferromagnet/insulator/ferromagnet junctions," Journal of Magnetism and Magnetic Materials, vol. 151, pp. 403-410, 1995.
5. S. Yuasa, A. Fukushima, H. Kubota, Y. Suzuki, and K. Ando, "Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co/MgO/Co magnetic tunnel junctions with bcc Co(001) electrodes," Applied Physics Letters, vol. 89, no. 4, pp. 042 505-1-042505-3, 2006.
6. K.-S. Kim, B. K. Cho, T. W. Kim, and W. J. Park, "Junction area dependence of breakdown characteristics in magnetic tunnel junctions," Journal of Applied Physics, vol. 93, no. 10, pp. 8364-8366, May 2003.
7. Y. Zheng and J.-G. Zhu, "Switching field variation in patterned submicron magnetic film elements," Journal of Applied Physics, vol. 81, no. 8, pp. 5471-5473, Apr. 15, 1997.
8. Y. Lu, P. L. Trouilloud, D. W. Abraham, R. Koch, J. Slonczewski, S. Brown, J. Bucchignano, E. O'Sullivan, R. A. Wanner, W. J. Gallagher, and S. S. P. Parkin, "Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency," Journal of Applied Physics, vol. 85, no. 8, pp. 5267-5269, Apr. 1999.
9. B. Warot, A. K. Petford-Long, and T. C. Anthony, "Magnetic properties of patterned tunnel junctions," Journal of Applied Physics, vol. 93, no. 10, pp. 7287-7289, May 15, 2003.
10. C. C. Chang, Y. C. Chang, W. S. Chung, J. C. Wu, Z. H. Wei, M. F. Lai, and C. R. Chang, "Influences of the aspect ratio and film thickness on switching properties of elliptical permalloy elements," IEEE Trans. Magn., vol. 41, no. 2, pp. 947-949, Feb. 2005.
11. M. H. Park, Y. K. Hong, S. H. Gee, D. W. Erickson, and B. C. Choi, "Magnetization configuration and switching behavior of submicron NiFe elements: Pac-man shape," Applied Physics Letters, vol. 83, no. 2, pp. 329-331, July 14, 2003.
12. M. H. Park, Y. K. Hong, S. H. Gee, D. W. Erickson, T. Tanaka, and B. C. Choi, "Effect of shape anisotropy on switching behaviors of Pac-man NiFe submicron elements," Journal of Applied Physics, vol. 95, no. 11, pp. 7019-7021, June 1, 2004.
13. 20 magnets," Journal of Applied Physics, vol. 97, p. 073904, 2005.
14. B. C. Choi, B. R. Pujada, Y. K. Hong, M. H. Park, H. Han, S. H. Gee, and G. W. Donohoe, "Micromagnetic domain structures and magnetization switching mechanism in submicrometer thin-film elements," IEEE Trans. Magn., vol. 41, no. 10, pp. 3109-3111, Oct. 2005.
15. S. Parke, M. Goldston, D. Hackler, K. DeGregorio, R. Hayhurst, A. Horvath, and S. Parsa, "Complementary sidewall-spacer-diffused ultrashallow SD extension process for damascene independently-double-gated SOI CMOS," in IEEE International SOI Conference, Oct. 4-7, 2004, pp. 104-105.
16. S. Parke, K. DeGregorio, M. Goldston, R. Hayhurst, and D. Hackler, "Flexfet: A low-cost, rad-hard, independent-double-gate SOI CMOS technology with flexible, dynamic reconfigurability," in IEEE Aerospace Conference, Mar. 5-12, 2005, pp. 1-8.
17. S. Parke, K. DeGregorio, D. Hackler, and D. Wilson, "Ultra-low-power dynamic-threshold digital circuits in the flexFET independently-double-gated SOI CMOS technology," in IEEE Workshop on Microelectronics and Electron Devices, Apr. 14, 2006, pp. 33-34.
18. S. T. Chui, "Bias dependence in spin-polarized tunneling," Physical Review B, vol. 55, no. 9, pp. 5600-5603, Mar. 1, 1997.
19. T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2874-2878, Dec. 1996.
20. J. M. Daughton, "Magnetic tunneling applied to memory," Journal of Applied Physics, vol. 81, no. 8, pp. 3758-3763, Apr. 15, 1997.
21. B. N. Engel, N. D. Rizzo, J. Janesky, J. M. Slaughter, R. Dave, M. DeHerrera, M. Durlam, and S. Tehrani, "The science and technology of magnetoresistive tunneling memory," IEEE Trans. Nanotechnol, vol. 1, no. 1, pp. 32-38, Mar. 2002.
22. M. Durlam, P. J. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. N. Engel, N. D. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. W. Kyler, J. J. Ren, J. A. Molla, W. A. Feil, R. G. Williams, and S. Tehrani, "A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects," IEEE J. Solid-State Circuits, vol. 38, no. 5, pp. 769-773, May 2003.
23. 2 cross point MRAM cell," in IEEE International Electron Devices Meeting Technical Digest, Dec. 13-15, 2004, pp. 23.2.1-23.2.4.