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Volumn , Issue , 2006, Pages 123-130

Magnetic tunnelling junction based FPGA

Author keywords

FPGA; Magnetic tunneling junction; Non volatility

Indexed keywords

ARRAYS; ELECTRON TUNNELING; ENERGY UTILIZATION; MAGNETIC PROPERTIES; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS;

EID: 33745859751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1117201.1117220     Document Type: Conference Paper
Times cited : (15)

References (11)
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    • Andre, T.W.1
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    • Black, W.1    Das, B.2
  • 7
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  • 8
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  • 9
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    • The impact of intrindic device fluctuations on CMOS SRAM cell stability
    • J. Bhavnagarwala, "The impact of intrindic device fluctuations on CMOS SRAM cell stability", in IEEE journal of solid-state circuits, vol. 36, no. 4, pp 658-665, (2001)
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  • 10
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    • A 4-Mb Toggle MRAM based on a novel bit and switching method
    • B.N. Engel et al. "A 4-Mb Toggle MRAM Based on a Novel Bit and Switching Method", in IEEE transaction on magnetics, vol. 41, no. 1, pp 132-136, (2005)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.