Growth of nickel disilicide nanowires by CVD

Journal of Non-Crystalline Solids

Volumn 356, Issue 23-24, 2010, Pages 1135-1144

  Iriarte, G F ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Chemical Vapor Deposition; Crystal growth; Electron microscopy

Indexed keywords

GROWTH DIRECTIONS; LATTICE PLANE; MONOCRYSTALLINE; NANOWIRE GROWTH; NI THIN FILMS; NICKEL DISILICIDE; NICKEL SILICIDE; NUCLEATION SITES; OPTIMAL SETS; PROCESS PARAMETERS; SEM; SYSTEMATIC STUDY; TEM; TEMPERATURE RANGE;

CRYSTAL GROWTH; CRYSTALLIZATION; DROP FORMATION; ELECTRON DIFFRACTION; ELECTRONS; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERNET PROTOCOLS; NANOWIRES; NICKEL; NICKEL ALLOYS; NUCLEATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SILICIDES; SINGLE CRYSTALS;

CHEMICAL VAPOR DEPOSITION;

EID: 77953322010     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.04.010     Document Type: Article

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