Influences of oxygen contamination on evaporated poly-Si thin-film solar cells by solid-phase epitaxy

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4351-4355

  He, Song ^a   Wong, Johnson ^a   Inn, Daniel ^b   Hoex, Bram ^c   Aberle, Armin G ^c   Sproul, Alistair B ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Base pressure; Deposition rate; Evaporated poly Si thin film solar cell; Oxygen contamination; Solid phase epitaxy

Indexed keywords

BASE PRESSURE; OXYGEN CONTAMINATION; POLY-SI; SOLID PHASE EPITAXY; THIN-FILM SOLAR CELLS;

CONTAMINATION; CRYSTAL GROWTH; DEPOSITION; DEPOSITION RATES; FILM PREPARATION; OXYGEN; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS;

CELLS;

EID: 77953137963     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.017     Document Type: Article

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