Hexagonal GaN films deposited by reactive hot wall evaporation technique

Materials Letters

Volumn 53, Issue 1-2, 2002, Pages 68-75

  Deb, B ^a   Chaudhuri, S ^a   Pal, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Conductivity; Direct band gap; Gallium nitride; Microstructure; Photoluminescence; Semiconductors

Indexed keywords

ABSORPTION SPECTROSCOPY; MICROSTRUCTURE; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SURFACE ROUGHNESS; THIN FILMS;

REACTIVE HOT WALL EVAPORATION;

GALLIUM NITRIDE;

EID: 0036497882     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00455-4     Document Type: Article

References (19)