Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 2104-2106

  Izawa, Y ^a   Matsumoto, K ^a   Kuriyama, K ^a   Kushida, K ^b  

^a HOSEI UNIVERSITY   (Japan)

^b OSAKA KYOIKU UNIVERSITY   (Japan)

Author keywords

Photoluminescence; Rutherford backscattering; Silicon implantation; Wide gap semiconductors; ZnO

Indexed keywords

ATOMIC CONCENTRATION; BULK SINGLE CRYSTALS; CRYSTALLINITIES; ION IMPLANTED; LATTICE DISPLACEMENT; LOW RESISTANCE; LOW RESISTIVITY; MINIMUM YIELD; RUTHERFORD BACK-SCATTERING; SHALLOW DONORS; VAN DER PAUW METHOD; WIDE-GAP SEMICONDUCTOR; ZN ATOMS; ZNO; ZNO SINGLE CRYSTALS;

ATOMS; BACKSCATTERING; ELECTRON MOBILITY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; ZINC; ZINC ALLOYS; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 77953126851     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.017     Document Type: Article

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