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Volumn , Issue , 2010, Pages 1325-1328

On signalling over Through-Silicon Via (TSV) interconnects in 3-D integrated circuits

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; ELECTRONICS PACKAGING; ENERGY UTILIZATION; INTEGRATED CIRCUIT INTERCONNECTS; SILICON; TIMING CIRCUITS;

EID: 77953116301     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/date.2010.5457013     Document Type: Conference Paper
Times cited : (23)

References (11)
  • 1
    • 33747566850 scopus 로고    scopus 로고
    • 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
    • May
    • K.Banerjee, S. J.Souri, P.Kapur, and K. C.Saraswat, "3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration," Proc. IEEE, vol. 89, no. 5, pp. 602-633, May 2001.
    • (2001) Proc. IEEE , vol.89 , Issue.5 , pp. 602-633
    • Banerjee, K.1    Souri, S.J.2    Kapur, P.3    Saraswat, K.C.4
  • 4
    • 51249113887 scopus 로고    scopus 로고
    • Electrical characterization of through silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation
    • J.Pak, C.Ryu, and J.Kim, "Electrical characterization of through silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation," in Proc. Electronic Materials and Packaging Conf., 2007, pp. 1-6.
    • Proc. Electronic Materials and Packaging Conf., 2007 , pp. 1-6
    • Pak, J.1    Ryu, C.2    Kim, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.