Modified ion sensitive field effect transistor sensors having an extended gate on a thick dielectric

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Ahn, Chang Geun ^a   Kim, Ansoon ^a   Park, Chan Woo ^a   Ah, Chil Seong ^a   Yang, Jong Heon ^a   Kim, Tae Youb ^a   Jang, Moongyu ^a   Sung, Gun Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYER; GATE CAPACITANCE; GATE VOLTAGES; HIGH SENSITIVITY; THICK DIELECTRICS;

CAPACITANCE; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; MONOCLONAL ANTIBODIES;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 77953004974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3431296     Document Type: Article

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