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Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

Improved optical properties of InAs quantum dots grown with an As 2 source using molecular beam epitaxy

(3) Sugaya, Takeyoshi a Amano, Takeru b Komori, Kazuhiro b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COALESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INAS QUANTUM DOTS; SELF-ORGANIZED INAS/GAAS QUANTUM DOT (QD) STRUCTURES; SURFACE MIGRATION; SURFACE STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33749326687 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2352809 Document Type: Article

Times cited : (38)

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