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Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films

(7) Kim, Shinhee a Lee, Hakjoon a Yoo, Taehee a Lee, Sangyeop a Lee, Sanghoon a Liu, X b Furdyna, J K b

a Korea University (South Korea)

b UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ANGULAR DEPENDENCE; ANISOTROPY CONSTANTS; EFFECT OF STRAIN; FERROMAGNETIC SEMICONDUCTOR; HALL EFFECT MEASUREMENT; HALL RESISTANCE; IN-PLANE; MAGNETIC FREE ENERGY; OUT-OF-PLANE COMPONENTS; OUT-OF-PLANE DIRECTION; TRANSITION BEHAVIOR;

BUFFER LAYERS; FREE ENERGY; GALLIUM ALLOYS; HALL EFFECT; MAGNETIC FIELD EFFECTS;

MAGNETIC ANISOTROPY;

EID: 77952959931 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427553 Document Type: Article

Times cited : (22)

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