Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 Surface

Nanoscale Research Letters

Volumn 5, Issue 1, 2010, Pages 143-148

  Lin, Xiu Zhu ^a   Li, Jing ^a   Wu, Qi Hui ^a,b  

^a XIAMEN UNIVERSITY   (China)

^b LA TROBE UNIVERSITY   (Australia)

Author keywords

Ag adsorption; First principles calculations; H adsorption; Si(111)

Indexed keywords

ADSORPTION ENERGIES; ADSORPTION PROPERTIES; ADSORPTION SITE; AG ATOMS; BONDING PROPERTY; FIRST-PRINCIPLES CALCULATION; H ADSORPTION; H-SI (111); H-TERMINATED SI SURFACES; HYDROGEN-TERMINATED SI(111); SI (1 1 1); SI SURFACES; SURFACE ELECTRONIC PROPERTIES;

ADSORPTION; ATOMS; ELECTRONIC PROPERTIES; SILVER; SURFACE PROPERTIES;

SILICON;

EID: 77952884498     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9456-x     Document Type: Article

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