Influence of nonlinear absorption on Raman amplification in Silicon waveguides

Optics Express

Volumn 12, Issue 12, 2004, Pages 2774-2780

  Claps, R ^a   Raghunathan, V ^a   Dimitropoulos, D ^a   Jalali, B ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; APPROXIMATION THEORY; INSERTION LOSSES; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS; SILICA; SILICON; WAVEGUIDES;

COUPLED-MODE CALCULATIONS (CMC); FREE CARRIER ABSORPTION (FCA); RAMAN AMPLIFICATIONS; SILICON-ON-INSULATOR (SOI) WAVEGUIDES; TWO-PHOTON-ABSORPTION (TPA);

NONLINEAR SYSTEMS;

EID: 4644227636     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OPEX.12.002774     Document Type: Article

References (22)

1. R. Claps, O. Dimitropoulos, B. Jalali, "Stimulated Raman Scattering in Silicon Waveguides," IEE Electron. Lett. 38, 1352-1354 (2002).
2. R. Claps, D. Dimitropoulos, Y. Han, and B. Jalali, "Observation of Raman emission in silicon waveguides at 1.54 μm," Opt. Express 10, 1305-1313 (2002), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-10-22-1305
3. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003), http://www.opticsexpress.org/abstract.cfm? URI=OPEX-11-15-1731
4. T.K. Liang, H.K. Tsang; "Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides," Appl. Phys. Lett. 84(15) 2745-2747 (2004).
5. M. Dinu, F. Quochi, H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys. Lett. 82, 2954 (2003).
6. A. R. Cowan, G. W. Rieger, and J. F. Young, "Nonlinear transmission of 1.5 μm pulses through single-mode silicon-on-insulator waveguide structures," Opt. Express 12, 1611-1621 (2004), http://www.opticsexpress. org/abstract.cfm?URI=QPEX-12-8-1611
7. J.H. Yee, H.H.M. Chau; "Two-Photon indirect transition in GaP crystal," Opt. Comm. 10, 56-58 (1974).
8. K.W. DeLong, G.I. Stegeman; "Two-photon absorption as a limitation to all-optical waveguide switching in semiconductors," Appl. Phys. Lett. 57(20) 2063-2064 (1990).
9. A. Villeneuve, C.C. Yang, G.I. Stegeman, C.N. Ironside, G. Scelsi, R.M. Osgood; "Nonlinear Absorption in a GaAs Waveguide Just Above Half the Band Gap," IEEE J. Quantum Electron. 30, 1172-1175 (1994).
10. A.M. Darwish, E.P. Ippen, H.Q. Lee, J.P. Donnelly, S.H. Groves; "Optimization of four-wave mixing conversion efficiency in the presence of nonlinear loss," Appl. Phys. Lett. 69, 737-739 (1996).
11. Y.-H. Kao, T.J. Xia, M.N. Islam; "Limitations on ultrafast optical switching in a semiconductor laser amplifier operating at transparency current", J. Appl. Phys. 86, 4740-4747 (1999).
12. K. Suto, T. Kimura, T. Saito, J. Nishizawa; "Raman amplification in GaP-AlxGal-xP waveguides for light frequency discrimination," IEE Proc.-Optoelectron. 145, 105-108 (1998).
13. S. Saito, K. Suto, T. Kimura, J.I. Nishizawa; "80-ps and 4-ns Pulse-Pumped Gains in a GaP-AlGaP Semiconductor Raman Amplifier," IEEE Photon. Technol. Lett.16, 395-397 (2004).
14. D. Dimitropoulos, B. Houshmand, R. Claps, B. Jalali, "Coupled-mode theory of Raman effect in silicon-on-insulator waveguides," Opt. Lett. 28, 1954-1956 (2003).
15. R. A. Soref, B. R. Bennett; "Electrooptical Effects in Silicon," IEEE J. Quantum Electron. QE-23, 123-129 (1987).
16. R. J. Bozeat, S. Day, F. Hopper, F.P. Payne, S.W. Roberts, M. Asghari, "Silicon Based Waveguides," in L. Pavesi, D.J. Lockwood (Eds.) Silicon Photonics, ch. 8, 269-294 (2004).
17. M.A. Mendicino; "Comparison of properties of available SOI materials," Properties of Crystalline Silicon, by Robert Hull 18.1 p. 992-1001 (1998).
18. J.L. Freeouf, S.T. Liu; IEEE Int. SOI conf. proc. Tucson, AZ, USA, 3-5 Oct. 1995 p. 74-5.
19. J.M. Ralston, R.K. Chang; "Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon," Phys. Rev. B 2, 1858 (1970).
20. rd Ed. 1985), ISBN 0-387-15578-3.
21. T. Kuwuyama, M. Ishimura, E. Arai; "Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field," Appl. Phys. Lett. 83, 928-930 (2003).
22. 2 waveguides by roughness reduction" Opt. Lett. 26, 1888-1890 (2001).