Quasi-epitaxial growth of crystalline wurtzite AlN thin films on Si(001) by RF magnetron sputtering

Proceedings - IEEE Ultrasonics Symposium

Volumn , Issue , 2009, Pages 1614-1619

  Caliendo, Cinzia ^a   Imperatori, P ^b   Scavia, G ^c  

^a ISC CNR   (Italy)

^b Area Della Ricerca Di Roma Montelibretti   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; MORPHOLOGY; PIEZOELECTRICITY; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; ZINC SULFIDE;

BULK SINGLE CRYSTALS; LOW SURFACE ROUGHNESS; MORPHOLOGICAL CHARACTERISTIC; PIEZOELECTRIC CONSTANT; RF REACTIVE MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SPUTTERING PARAMETERS; TARGET-SUBSTRATE DISTANCE;

THIN FILMS;

EID: 77952842186     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2009.5441423     Document Type: Conference Paper

References (10)

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