Erbium alloyed aluminum nitride films for piezoelectric applications

Materials Research Society Symposium Proceedings

Volumn 1129, Issue , 2009, Pages 21-25

  Kabulski, A ^a   Pagan V ^a   Korakakis, D ^a,b  

^a West Virginia University   (United States)

^b NATIONAL ENERGY TECHNOLOGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALUMINUM NITRIDE FILMS; CONVENTIONAL METHODS; ER CONCENTRATIONS; F VALUES; LEAD ZIRCONATE TITANATE; NITRIDE-BASED DEVICES; PIEZO-ELECTRIC EFFECTS; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC RESPONSE; PZT; PZT FILM; RARE EARTH DOPANTS; RARE EARTH DOPING; SENSOR AND ACTUATORS; THICKNESS OF THE FILM;

ALUMINUM; ALUMINUM NITRIDE; DOPING (ADDITIVES); ERBIUM; FILMS; MEMS; NITRIDES; OPTICAL PROPERTIES; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; RARE EARTHS; SEMICONDUCTING LEAD COMPOUNDS;

PIEZOELECTRICITY;

EID: 70449562862     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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