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Volumn , Issue , 2010, Pages 320-323

Mechanisms of process-induced heating of MEMS structures during plasma release etch

Author keywords

[No Author keywords available]

Indexed keywords

IN-SITU; INDUCED HEATING; INDUCTIVELY-COUPLED; MEMS-STRUCTURE; RADIATIVE COOLING; RELEASE ETCH; SI-DRIE; STRUCTURE TEMPERATURE; TEMPERATURE RISE; TEMPERATURE TRENDS; TEST STRUCTURE;

EID: 77952769551     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442500     Document Type: Conference Paper
Times cited : (1)

References (6)
  • 2
    • 34948892097 scopus 로고    scopus 로고
    • Process development for CMOS-MEMS sensors with robust electrically isolated bulk silicon microstructures
    • H. Qu and H. Xie "Process development for CMOS-MEMS sensors with robust electrically isolated bulk silicon microstructures" J. MEMS, vol. 16, no. 5, pp. 1153-1161, 2007
    • (2007) J. MEMS , vol.16 , Issue.5 , pp. 1153-1161
    • Qu, H.1    Xie, H.2
  • 3
    • 84952618677 scopus 로고
    • Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
    • D. L. Flamm, "Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas" Pure & Appl. Chem, vol. 62, no. 9, pp. 1709-1720, 1990
    • (1990) Pure & Appl. Chem , vol.62 , Issue.9 , pp. 1709-1720
    • Flamm, D.L.1
  • 5
    • 0032204546 scopus 로고    scopus 로고
    • Surface temperature and thermal balance of probes immersed in high density plasma
    • R. Piejak, V. Godyak, B. Alexandrovich, N. Tishchenko, "Surface temperature and thermal balance of probes immersed in high density plasma," Plasma Sources Sci. Technol., vol. 7, no. 4, pp. 590-598, 1998
    • (1998) Plasma Sources Sci. Technol. , vol.7 , Issue.4 , pp. 590-598
    • Piejak, R.1    Godyak, V.2    Alexandrovich, B.3    Tishchenko, N.4
  • 6
    • 0035797580 scopus 로고    scopus 로고
    • The power balance at substrate surfaces during plasma processing
    • H. Kersten, H. Deutsch, H. Steffen, G. M. W. Kroesen and R. Hippler, "The power balance at substrate surfaces during plasma processing" Vacuum, vol. 63, no. 3, pp. 385-431, 2001
    • (2001) Vacuum , vol.63 , Issue.3 , pp. 385-431
    • Kersten, H.1    Deutsch, H.2    Steffen, H.3    Kroesen, G.M.W.4    Hippler, R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.