Light-emitting diode based on ZnO by plasma-enhanced metal-organic chemical vapor deposition employing microwave excited plasma

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Asahara, Hirokazu ^a,b   Takamizu, Daiju ^b   Inokuchi, Atsutoshi ^a,c   Goto, Tetsuya ^a   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; CURRENT VOLTAGE; DIMETHYLZINC; DOPED ZNO; FORWARD BIAS; GROWTH METHOD; HIGH DENSITY PLASMAS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; N-DOPED; NITROGEN CONCENTRATIONS; NITROGEN-DOPED; PRECURSOR MATERIALS; RECTIFYING CHARACTERISTICS; ROOM TEMPERATURE; TWO-DIMENSIONAL GROWTH; ZINC PRECURSOR; ZNO; ZNO SUBSTRATE;

CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; FILM GROWTH; INDUSTRIAL CHEMICALS; LIGHT EMITTING DIODES; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; NITROGEN; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; OXYGEN; PLASMA DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SOIL CONSERVATION; SUBSTRATES; SURFACE STRUCTURE; TWO DIMENSIONAL; ZINC; ZINC OXIDE;

NITROGEN PLASMA;

EID: 77952721667     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DG14     Document Type: Article

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