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Volumn 48, Issue 4 PART 2, 2009, Pages

Effects of ion-bombardment-assist and high temperature on growth of zinc oxide films by microwave excited high density plasma enhanced metal organic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; CARBON AND HYDROGENS; CRYSTALLINITIES; ELECTRICAL PROPERTY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HALL EFFECT MEASUREMENT; HIGH DENSITY PLASMAS; HIGH QUALITY; HIGH TEMPERATURE; IMPURITY CONCENTRATION; LOW TEMPERATURES; MOCVD; PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITIONS; RADIO FREQUENCIES; ROCKING CURVES; ROOM TEMPERATURE; SELF-BIAS; XRD; ZNO; ZNO FILMS;

EID: 77952538347     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C135     Document Type: Article
Times cited : (4)

References (12)
  • 11
    • 77952478211 scopus 로고    scopus 로고
    • Dr. Thesis, Faculty of Engineering, Tohoku University, Sendai
    • M. Hirayama: Dr. Thesis, Faculty of Engineering, Tohoku University, Sendai (1997).
    • (1997)
    • Hirayama, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.