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Volumn 48, Issue 4 PART 2, 2009, Pages
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Effects of ion-bombardment-assist and high temperature on growth of zinc oxide films by microwave excited high density plasma enhanced metal organic chemical vapor deposition
b
ROHM CO LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
A-PLANE SAPPHIRE;
CARBON AND HYDROGENS;
CRYSTALLINITIES;
ELECTRICAL PROPERTY;
FIELD EMISSION SCANNING ELECTRON MICROSCOPY;
HALL EFFECT MEASUREMENT;
HIGH DENSITY PLASMAS;
HIGH QUALITY;
HIGH TEMPERATURE;
IMPURITY CONCENTRATION;
LOW TEMPERATURES;
MOCVD;
PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITIONS;
RADIO FREQUENCIES;
ROCKING CURVES;
ROOM TEMPERATURE;
SELF-BIAS;
XRD;
ZNO;
ZNO FILMS;
CARBON FILMS;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRIC PROPERTIES;
FIELD EMISSION;
FIELD EMISSION MICROSCOPES;
HALL EFFECT;
INDUSTRIAL CHEMICALS;
ION BOMBARDMENT;
IONS;
MAGNETIC FIELD EFFECTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MICROWAVES;
OPTICAL EMISSION SPECTROSCOPY;
OPTICAL PROPERTIES;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
PERMITTIVITY;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SURFACE CHEMISTRY;
THERMAL DESORPTION;
THERMAL DESORPTION SPECTROSCOPY;
X RAY DIFFRACTION;
ZINC;
ZINC OXIDE;
OXIDE FILMS;
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EID: 77952538347
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.04C135 Document Type: Article |
Times cited : (4)
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References (12)
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