Characterization of zinc oxide films grown by a newly developed plasma enhanced metal organic chemical vapor deposition employing microwave excited high density plasma

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2994-2998

  Asahara, Hirokazu ^a,b   Inokuchi, Atsutoshi ^a,c   Watanuki, Kohei ^a,d   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

^d UBE INDUSTRIES LTD   (Japan)

Author keywords

Crystallization; Gallium dope; Microwave excited high density plasma; Plasma enhanced MOCVD; Radical reaction; Zinc oxide

Indexed keywords

ANNEALING; CARBON FILMS; CONCENTRATION (PROCESS); CORUNDUM; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; NANOCRYSTALLINE ALLOYS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; OXIDE FILMS; OXIDES; PERMITTIVITY; PLASMA DEPOSITION; PLASMAS; REACTION KINETICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; VAPORS; ZINC; ZINC ALLOYS; ZINC OXIDE;

A-PLANE; ACTIVE SPECIES; C -AXIS; CARBON CONCENTRATIONS; COMPOUND SEMICONDUCTORS; GALLIUM DOPE; HIGH DENSITIES; HIGH-DENSITY; HYDROTHERMAL METHODS; LOW TEMPERATURES; PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITIONS; PROCESS CONDITIONS; RADICAL REACTION; RADICAL REACTIONS; SEMICONDUCTOR MANUFACTURING; SILICON DEVICES; ZINC OXIDE FILMS; ZINC PRECURSORS; ZNO FILMS; ZNO SUBSTRATES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 54249114502     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2994     Document Type: Article

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