Development of field-effect transistor-type photorewritable memory using photochromic interface layer

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Yoshida, Manabu ^a   Suemori, Kouji ^a   Uemura, Sei ^a   Hoshino, Satoshi ^a   Takada, Noriyuki ^a   Kodzasa, Takehito ^a   Kamata, Toshihide ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DEEP TRAPS; DIARYLETHENES; GATE INSULATOR LAYERS; HIGHEST OCCUPIED MOLECULAR ORBITAL; INTERFACE LAYER; OPEN-RING ISOMERS; PENTACENES; PHOTO-CHROMIC MATERIALS; PHOTOISOMERS; PHOTOSWITCHING;

CHROMOGENICS; FIELD EFFECT TRANSISTORS; ISOMERS; MOLECULAR ORBITALS; PHOTOCHROMISM;

DIFFERENTIAL EQUATIONS;

EID: 77952716386     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DK09     Document Type: Article

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