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Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 1, 2009, Pages 0911021-0911024

Fundamental study of InP-based open-gate field-effect transistors for application to liquid-phase chemical sensors

(3) Yoshizawa, Naoki a Sato, Taketomo a Hashizume, Tamotsu a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SATURATION; GATE BIAS; GATE FIELD; INP; ION SPECIES; LIQUID PHASE; PH RANGE; PH SENSITIVITY; PH VALUE; PINCHOFF; RAPID RESPONSE;

CHEMICAL SENSORS; ELECTROLYTES; ION SELECTIVE MEMBRANES; IONS; LIQUIDS; MESFET DEVICES; PH EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 77952689832 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.091102 Document Type: Article

Times cited : (4)

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