Growth of anodic oxides on n-InP studied by electrochemical methods and surface analyses

Journal of the Electrochemical Society

Volumn 154, Issue 5, 2007, Pages

  Simon, N ^a   Quach, N C ^a   Gonalves A M ^a   Etcheberry, A ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CAPACITANCE MEASUREMENT; INDIUM PHOSPHIDE; PH EFFECTS; PHOTOCURRENTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANODIC MECHANISM; ANODIC OXIDES; PHOTOCURRENT TRANSIENTS;

ELECTROCHEMISTRY;

EID: 34047217224     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2709504     Document Type: Article

References (43)

1. C. W Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces, Plenum, New York (1985).
2. D. T Clark, T. Fok, G. G. Roberts, and R. W. Syres, Thin Solid Films, 70, 26 (1980).
3. A. Guivarc'h, H. L'Haridon, G. Pelous, G. Hollinger, and P. Pertosa, J. Appl. Phys., 55, 1139 (1984).
4. J. Massies, F. Turco, and J.-P. Contour, Jpn. J. Appl. Phys., Part 2, 25, L664 (1986).
5. J. F. Wager and C. Wilmsen, J. Appl. Phys., 51, 812 (1980).
6. H. L. Hartnagel, Oxides and Oxide Films, Vol. 6, Marcel Dekker, New York (1986).
7. G. Hollinger, E. Bergignat, J. Joseph, and Y. Robach, J. Vac. Sci. Technol. A, A3, 2082 (1985).
8. Y. Robach, A. Gagnaire, J. Joseph, E. Bergignat, and G. Hollinger, Thin Solid Films, 162, 81 (1988).
9. G. Hollinger, J. Joseph, Y. Robach, E. Bergignat, B. Comm̀re, P. Viktorovitch, and M. Froment, J. Vac. Sci. Technol. B, B3 (5) (1987).
10. J. Joseph, A. Mahdjoub, and Y. Robach, Rev. Phys. Appl., 24, 189 (1989).
11. P. H. L. Notten, J. E. A. M. Van den Meeraker, and J. J. Kelly, Etching of III-V Semiconductors: An Electrochemical Approach, Elsevier, Amsterdam (1991).
12. M. P. Besland, P. Louis, Y. Robach, J. Joseph, G. Hollinger, D. Gallet, and P. Viktorovitch, Appl. Surf. Sci. 0169-4332, 846, 56 (1992).
13. M. P. Besland, Y. Robach, and J. Joseph, J. Electrochem. Soc., 140, 1 (1993).
14. P. Louis, M. P. Besland, Y. Robach, and J. Joseph, J. Electrochem. Soc., 142, 4 (1995).
15. A. Pakes, P. Skeldon, G. E. Thompson, S. Moisa, G. I. Sproule, and M. J. Graham, Corros. Sci., 44, 2161 (2002).
16. I. Gerard, N. Simon, and A. Etcheberry, Appl. Surf. Sci., 734, 175 (2001).
17. N. Simon, I. Ǵrard, C. Mathieu, and A. Etcheberry, Electrochim. Acta, 47/16, 2621 (2002).
18. N. Simon, I. Ǵrard, J. Vigneron, and A. Etcheberry, Thin Solid Films, 400, 134 (2001).
19. N. C. Quach, I. Ǵrard, N. Simon, and A. Etcheberry, Prog. Solid State Chem., 3, 1033 (2003).
20. N. C. Quach, N. Simon, I. Ǵrard, P. Tran-Van, and A. Etcheberry, J. Electrochem. Soc., 151, C318 (2004).
21. T. Djenizian, G. I. Sproule, S. Moisa, D. Landheer, X. Wu, L. Santinacci, P. Schmuki, and M. J. Graham, Electrochim. Acta, 47, 2733 (2002).
22. S. Preusser, M. Herlem, A. Etcheberry, and J. Jaune, Electrochim. Acta, 37, 289 (1992).
23. Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, D. Briggs, and, M. Seah, Editors, John Wiley, New York (1984).
24. G. Hollinger, C. Estrada, J. Durand, and M. Gendry, J. Microsc. Spectrosc. Electron., 13, 31 (1988).
25. Encyclopedia of Electrochemistry of the Elements, Vol. 6, A. J. Bard, Editor, Marcel Dekker, New York (1976).
26. R. Memming, Semiconductor Electrochemistry, Wiley-VCH, Weinheim (2000).
27. F. Iranzo-Marin, C. Debiemme-Chouvy, M. Herlem, J. L. Sculfort, and A. Etcheberry, J. Electroanal. Chem., 365, 283 (1994).
28. L. W. H. Van Mezemael, F. Cardon, and W. Gomes, J. Electroanal. Chem. Interfacial Electrochem., 87, 105 (1978).
29. W. P. Gomes and F. Cardon, Prog. Surf. Sci., 12, 155 (1982).
30. H. Gerischer, Electrochim. Acta, 34, 1005 (1989).
31. D. Lincot and J. Vedel, J. Electroanal. Chem. Interfacial Electrochem., 220 (2), 179 (1987).
32. P. Allongue, S. Blonkowski, and D. Lincot, J. Electroanal. Chem. Interfacial Electrochem., 300, 261 (1991).
33. T. Moreau, A. Etcheberry, M. Herlem, Y. F. Nicolau, and M. Delamar, C.R. Acad. Sci. Paris, Śries II, 308, 275 (1989).
34. J. J. Kelly and P. H. L. Notten, J. Electrochem. Soc., 130, 12 (1983).
35. Z. Hens and W. P. Gomes, J. Cell. Sci., 104, 7725 (2000).
36. S. R. Morrisson, Electrochemistry at Semiconductor and Oxidized Metal Electrodes, Plenum Press, New York (1980).
37. D. Lincot and J. Vedel, J. Phys. Chem., 92, 4103 (1988).
38. I. Ǵrard, F. Iranzo-Marin, J. Vigneron, and A. Etcheberry, J. Electroanal. Chem., 401, 57 (1996).
39. S. M. Sze, Physics of Semiconductor Devices, Wiley Interscience, New York (1981).
40. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley Interscience, New York (1982).
41. W. M. Siu and R. S. C. Cobbold, Tech. Dig. - Int. Electron Devices Meet., ED-26, 1805 (1979).
42. P. H. L. Notten, J. E. A. M. Van Den Meerakker, and J. J. Kelly, Etching of III-V Semiconductors, An Electrochemical Approach, Elsevier Science Publishers, Oxford (1991).
43. P. Schmuki, G. I. Sproule, J. A. Bardwell, Z. H. Lu, and M. J. Graham, J. Appl. Phys., 79, 7303 (1996).