Effect of H2 carrier gas on the growth of gan nanowires on Si(111) substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 1, 2010, Pages 0450041-0450044

  Ra, Yong Ho ^a   Navamathavan, Rangaswamy ^a   Cha, Jun Ho ^a   Song, Ki Young ^a   Lim, Hong Chul ^a   Park, Ji Hyeon ^a   Kim, Dong Wook ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GAS; CARRIER GAS FLOW RATES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN NANOWIRES; GROWTH OF GAN; LATERAL GROWTH; METALORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGICAL CHANGES; OPTICAL CHARACTERIZATION; SI(111) SUBSTRATE; SILICON (111) SUBSTRATES; UNIFORM DIAMETER; VERTICALLY ALIGNED;

ENAMELS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 77952660173     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.045004     Document Type: Article

References (17)

1. W. Han, S. Fan, Q. Li, and Y. Hu: Science 277 (1997) 1287.
2. S. Gradecak, F. Qian, and Y. Li: Appl. Phys. Lett. 87 (2005) 173111.
3. N. Wang, Y. Cai, and R. Q. Zhang: Mater. Sci. Eng. R 60 (2008) 1.
4. L. Cademartiri and G. A. Ozin: Adv. Mater. 21 (2009) 1013.
5. H. J. Fan, P. Werner, and M. Zacharias: Small 2 (2006) 700.
6. C. N. R. Rao, F. L. Deepak, G. Gundiah, and A. Govindaraj: Prog. Solid State Chem. 31 (2003) 5.
7. S. Luo, W. Zhou, Z. Zhang, L. Liu, X. Dou, J. Wang, X. Zhao, D. Liu, Y. Gao, L. Song, Y. Xiang, J. Zhou, and S. Xie: Small 1 (2005) 1004.
8. H. Pan and Y. P. Feng: ACS Nano 2 (2008) 2410.
9. R. A. Schlitz, D. E. Perea, J. L. L. Falk, E. R. Hemesath, and L. J. Lauhon: Appl. Phys. Lett. 95 (2009) 162101.
10. R. S. Wagner and W. C. Ellis: Appl. Phys. Lett. 4 (1964) 89.
11. J. Yoo, Y. J. Hong, S. J. An, G. C. Yi, B. Chon, T. Joo, J. W. Kim, and J. S. Lee: Appl. Phys. Lett. 89 (2006) 043124.
12. D.-H. Kuo and W.-H. Wu: Chem. Vapor Deposition 15 (2009) 11.
13. C. Y. Nam, J. Y. Kim, and J. E. Fischer: Appl. Phys. Lett. 86 (2005) 193112.
14. W. C. Hou and F. C. N. Hong: Nanotechnology 20 (2009) 055606.
15. F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet, and C. M. Lieber: Nano Lett. 4 (2004) 1975.
16. E. S. Jang, Y. H. Ra, Y. M. Lee, S. H. Yun, D. W. Kim, R. Navamathavan, J. S. Kim, I. H. Lee, and C. R. Lee: Jpn. J. Appl. Phys. 48 (2009) 091001.
17. X. Duan, J. Wang, and C. M. Lieber: Appl. Phys. Lett. 76 (2000) 1116.