Impact of process variations and long term degradation on 6T-SRAM cells

Advances in Radio Science

Volumn 5, Issue , 2007, Pages 321-325

  Fischer, Th ^a   Olbrich, A ^b   Georgakos, G ^b   Lemaitre, B ^b   Schmitt Landsiedel, D ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FIELD EFFECT TRANSISTORS; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; NEGATIVE BIAS TEMPERATURE INSTABILITY; THRESHOLD VOLTAGE; VOLTAGE SCALING;

DEEP-SUBMICRON CMOS TECHNOLOGY; DEGRADATION MECHANISM; DEVICE PARAMETERS; ELECTRICAL FIELD; HOT CARRIER INJECTION; PERFORMANCE DEGRADATION; PROCESS VARIATION; RELIABILITY PROBLEMS;

STATIC RANDOM ACCESS STORAGE;

EID: 34250703759     PISSN: 16849965     EISSN: 16849973     Source Type: Journal    
DOI: 10.5194/ars-5-321-2007     Document Type: Article

References (9)

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