SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 4 PART 2, 2009, Pages

Vanadium dioxide and vanadium sesquioxide thin films fabricated on (0001) or (1010)Al2O3 by reactive RF-magnetron sputter deposition and subsequent annealing processes

(5) Yun, Sun Jin a Lim, Jung Wook a Noh, Jong Su a Kim, Bong Jun a Kim, Hyun Tak a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; CRITICAL TEMPERATURES; LOW PRESSURES; MAGNETRON SPUTTER DEPOSITION; ONE-STEP ANNEALING; REACTIVE RF MAGNETRON SPUTTER; SINGLE-CRYSTALLINE; SURFACE ORIENTATION; TWO-STEP ANNEALING; VANADIUM DIOXIDE; VANADIUM SESQUI-OXIDE;

ALUMINUM; FABRICATION; GELS; MAGNETRONS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

ANNEALING;

EID: 77952513838 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C139 Document Type: Article

Times cited : (10)

References (12)

1
- 0005995330
- F. A. Chudnovski: Sov. Phys. Tech. Phys. 20 (1976) 999.
- (1976) Sov. Phys. Tech. Phys. , vol.20 , pp. 999
- Chudnovski, F.A.¹

2
- 0004032707
- Taylor and Francis, London, 2nd ed., and 185
- N. F. Mott: Metal-Insulator Transition (Taylor and Francis, London, 1990) 2nd ed., pp. 176 and 185.
- (1990) Metal-insulator Transition , pp. 176
- Mott, N.F.¹

3
- 33846331644
- B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim: Appl. Phys. Lett. 90 (2007) 023515.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 023515
- Kim, B.-J.¹ Lee, Y.W.² Chae, B.-G.³ Yun, S.J.⁴ Oh, S.-Y.⁵ Kim, H.-T.⁶ Lim, Y.-S.⁷

4
- 33645510281
- B.-G. Chae, H.-T. Kim, S. J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, and K.-Y. Kang: Electrochem. Solid-State Lett. 9 (2006) C12.
- (2006) Electrochem. Solid-state Lett. , vol.9
- Chae, B.-G.¹ Kim, H.-T.² Yun, S.J.³ Kim, B.-J.⁴ Lee, Y.-W.⁵ Youn, D.-H.⁶ Kang, K.-Y.⁷

5
- 43949138277
- S. J. Yun, B.-G. Chae, J. W. Lim, J.-S. Noh, and H.-T. Kim: Electrochem. Solid-State Lett. 11 (2008) H173.
- (2008) Electrochem. Solid-state Lett. , vol.11
- Yun, S.J.¹ Chae, B.-G.² Lim, J.W.³ Noh, J.-S.⁴ Kim, H.-T.⁵

6
- 21544475725
- D. P. Partlow, S. R. Gurkovich, K. C. Radford, and L. T. Denes: J. Appl. Phys. 70 (1991) 443.
- (1991) J. Appl. Phys. , vol.70 , pp. 443
- Partlow, D.P.¹ Gurkovich, S.R.² Radford, K.C.³ Denes, L.T.⁴

7
- 33846928739
- P. Metcalf, S. Guha, L. P. Gonzalez, J. O. Barnes, E. B. Slamovich, and J. Honig: Thin Solid Films 515 (2007) 3421.
- (2007) Thin Solid Films , vol.515 , pp. 3421
- Metcalf, P.¹ Guha, S.² Gonzalez, L.P.³ Barnes, J.O.⁴ Slamovich, E.B.⁵ Honig, J.⁶

8
- 0034188426
- I. Yamaguchi, T. Manabe, T. Kumagai, W. Kondo, and S. Mizuta: Thin Solid Films 366 (2000) 294.
- (2000) Thin Solid Films , vol.366 , pp. 294
- Yamaguchi, I.¹ Manabe, T.² Kumagai, T.³ Kondo, W.⁴ Mizuta, S.⁵

9
- 0942267768
- B. Sass, C. Tusche, W. Felsch, N. Quaas, A. Weismann, and M. Wenderoth: J. Phys.: Condens. Matter 16 (2004) 77.
- (2004) J. Phys.: Condens. Matter , vol.16 , pp. 77
- Sass, B.¹ Tusche, C.² Felsch, W.³ Quaas, N.⁴ Weismann, A.⁵ Wenderoth, M.⁶

10
- 54249146064
- S. J. Yun, J. W. Lim, J.-S. Noh, B.-G. Chae, and H.-T. Kim: Jpn. J. Appl. Phys. 47 (2008) 3067.
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 3067
- Yun, S.J.¹ Lim, J.W.² Noh, J.-S.³ Chae, B.-G.⁴ Kim, H.-T.⁵

11
- 0040090487
- B. L. Chamberland: J. Solid State Chem. 7 (1973) 377.
- (1973) J. Solid State Chem. , vol.7 , pp. 377
- Chamberland, B.L.¹

12
- 36449008634
- D. H. Kim and H. S. Kwok: Appl. Phys. Lett. 65 (1994) 3188.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 3188
- Kim, D.H.¹ Kwok, H.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.