Preparation of V2O3 thin films by the reduction of VO2 in a very low pressure

Electrochemical and Solid-State Letters

Volumn 11, Issue 7, 2008, Pages

  Yun, Sun Jin ^a   Chae, Byung Gyu ^a   Lim, Jung Wook ^a   Noh, Jong Su ^a   Kim, Hyun Tak ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; METAL INSULATOR TRANSITION; SOL-GEL PROCESS; VANADIUM COMPOUNDS;

ANNEALING TEMPERATURES; PROCESS TEMPERATURE; RESISTANCE CHANGES;

THIN FILMS;

EID: 43949138277     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2909475     Document Type: Article

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