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Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

Enhanced two-photon absorption in a GaAs/AlAs multilayer cavity

(6) Kanbara, Toshiyuki a Nakano, Shoya a Yano, Shinsuke a Morita, Ken a Kitada, Takahiro a Isu, Toshiro a

a UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LIGHT INTENSITY; BULK SAMPLES; CAVITY LAYERS; DOUBLE LAYERS; ENHANCEMENT FACTOR; GAAS; GAAS SUBSTRATES; LIGHT INTENSITY DISTRIBUTION; SELECTIVE ETCHING; STRONG ENHANCEMENT; TIME-RESOLVED; TWO-PHOTON ABSORPTIONS;

ABSORPTION; GALLIUM ARSENIDE; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; MULTILAYERS; MULTIPHOTON PROCESSES; OPTICAL MATERIALS; PHOTONS; SEMICONDUCTING GALLIUM; TRANSFER MATRIX METHOD;

GALLIUM ALLOYS;

EID: 77952485809 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C105 Document Type: Article

Times cited : (17)

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