A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 22-25

  Zhao, Rong ^a   Lau, Wai Shing ^a   Chong, Tow Chong ^a   Li, Ming Fu ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

AlAs; GaAs; LT GaAs; Wet selective etching

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; ORGANIC ACIDS; PH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS; TEMPERATURE;

ALUMINUM ARSENIDE; CONVENTIONAL GALLIUM ARSENIDE; ETCHING SOLUTIONS; LOW TEMPERATURE GROWN GALLIUM ARSENIDE; SELECTIVE ETCHING; SUCCINIC ACID;

ETCHING;

EID: 0029753817     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.22     Document Type: Review

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