Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 78-79

  Kobayashi, Shigeki ^a   Saitoh, Masumi ^a   Uchida, Ken ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; SILICON COMPOUNDS; TELEGRAPH;

RANDOM TELEGRAPH NOISE; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949105030     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588569     Document Type: Conference Paper

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5. K. Uchida et al., IEDM2002, 177.
6. F. Stern et al., PR, 163 816 (1967).
7. Y. Kamimuta et al., JJAP, 44 1301 (2005)