Comparative simulation study of GNR-FETs using EHT- and TB-based NEGF

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 165-168

  Zhang, Ming ^a   Ran, Qiushi ^a   Guan, Ximeng ^a   Zhang, Jinyu ^a   Wang, Yan ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

EHT; Graphene nanoribbon; NEGF

Indexed keywords

BAND GAPS; COMPARATIVE SIMULATION; COMPARATIVE STUDIES; EHT; EXTENDED HUCKEL; GRAPHENE NANORIBBON; MOS-FET; NEGF; NON-EQUILIBRIUM GREEN'S FUNCTION; STRUCTURAL DEPENDENCE; TIGHT BINDING; TRANSPORT CHARACTERISTICS;

DIFFERENTIAL EQUATIONS; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; MESFET DEVICES; SEMICONDUCTOR DEVICES; TERBIUM ALLOYS;

BOND LENGTH;

EID: 67650381945     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648263     Document Type: Conference Paper

References (17)

1. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE EDL, vol. 28, pp. 282-284, April 2007.
2. B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, D. Nikonov, and M. A. Stettler, "Carbon nanoribbons: an alternative to carbon nanotubes," SISPAD Proceedings, pp. 27-30, Sept. 2006.
3. X. Guan, M. Zhang, Q. Liu, and Z. Yu, "Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method," IEDM Proceedings, pp. 761,2007.
4. X. Wang, et al., "Room-Temperature All-Semiconducting Sub-l0-nm Graphene Nanoribbon Field-Effect Transistors," Phys. Rev. Lett., vol. 100, pp. 206803.1-206803.4, May 2008.
5. Y. W. Song, M. L. Cohen, and S. G. Louie, "Energy Gaps in Graphene Nanoribbons," Phys. Rev. Lett., vol. 97,216803.1-216803.4,2006.
6. D. Kienle, J. I. Cerdá, A. W. Ghosh, "Extended Hückel theory for band structure, chemistry, and transport.I. Carbon nanotubes," J. Appl. Phys. vol. 100, pp. 043714.1-043714.9, 2006
7. X. Guan, Q. Ran, M. Zhang, Z. Yu, and H.-S. Philip Wong, "Modeling of Schottky and Ohmic Contacts between Metal and Graphene Nanoribbons using Extended Hückel Theory-Based NEGF Method," unpublished.
8. D.Porezag, Th. Frauenheim, and Th. Köhler, "Construction of tight-binding-like potentials on the basis of density-functional theory: Application to carbon," Phys. Rev. B, vol. 51, p. 12947, 1995
9. H.Tai, "Generation of a two-center overlap integral over Slater orbitals of higher principal quantum numbers," Phys. Rev. A, vol. 45, no. 3, pp.1454-1464, Feb 1992.
10. J. Cerdá and F. Soria "Accurate and transferable extended Hückel-type tight-binding parameters," Phys. Rev. B, vol. 61, no.12, pp. 7965, March 2000.
11. J. Cerdá, http://www.icmm.csic.es/jcerda/index.html
12. H. Raza, E. C. Kan, "An extended Hückel theory based atomistic model for graphene nanoelectronics", J Comput Electron, D0I10.1007/s10825008-0180-z, 2008.
13. M. P. L. Sancho, J. M. L. Sancho and J Rubio, "Highly convergent schemes for the calculation of bulk and surface Green functions," Phys. F: Met. Phys., vol. 15, pp. 851-858,1985.
14. S. Datta, Quantum Transport: Atom to Transistor, Cambridge University Press, Cambridge, 2005
15. D.Nikonov, http://www.nanohub.org/resources/1983/, 2006
16. M. Brandbyge, J L Mozos, P. Ordejo, J. Taylor, and K. Stokbro, "Density-functional method for nonequilibrium electron transport," Phys. Rev B, vol. 65, 165401.1-165401.17, March 2002.
17. Q. Yan, et al., "Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping," Nano. Lett. vol. 7, pp. 1469-1464, 2007.