-
1
-
-
44149119344
-
Room- temperature all-semiconducting sub-10-nm graphene nanoribbon field- effect transistors
-
May
-
X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, "Room- temperature all-semiconducting sub-10-nm graphene nanoribbon field- effect transistors, " Phys. Rev. Lett., vol. 100, 206803, May 2008.
-
(2008)
Phys. Rev. Lett
, vol.100
, pp. 206803
-
-
Wang, X.1
Ouyang, Y.2
Li, X.3
Wang, H.4
Guo, J.5
Dai, H.6
-
2
-
-
34247647567
-
Conductance modeling for graphene nanoribbon (GNR) interconnects
-
May
-
A. Naeemi, and J. Meindl, "Conductance modeling for graphene nanoribbon (GNR) interconnects," IEEE EDL, vol. 28, pp. 428-431, May 2007.
-
(2007)
IEEE EDL
, vol.28
, pp. 428-431
-
-
Naeemi, A.1
Meindl, J.2
-
3
-
-
33748331486
-
Extended Huckel theory for band structure, chemistry, and transport. I. carbon nanotubes
-
Aug
-
D. Kienle, J. Cerda, A. Ghosh, "Extended Huckel theory for band structure, chemistry, and transport. I. carbon nanotubes," J. Appl. Phys., vol. 100, 043714, Aug. 2006.
-
(2006)
J. Appl. Phys
, vol.100
, pp. 043714
-
-
Kienle, D.1
Cerda, J.2
Ghosh, A.3
-
4
-
-
0346927956
-
An extended Huckel theory. I. hydrocarbons
-
Sept
-
R. Hoffmann, "An extended Huckel theory. I. hydrocarbons," J. Chem. Phys., vol. 39, pp. 1397-1412, Sept. 1963.
-
(1963)
J. Chem. Phys
, vol.39
, pp. 1397-1412
-
-
Hoffmann, R.1
-
5
-
-
0001436270
-
Accurate and transferable extended Huckel type tight-binding parameters
-
Mar
-
J. Cerda, and F. Soria, "Accurate and transferable extended Huckel type tight-binding parameters," Phys. Rev. B., vol. 61, pp. 7965-7971, Mar. 2000.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 7965-7971
-
-
Cerda, J.1
Soria, F.2
-
7
-
-
84986524957
-
Convergence acceleration of iterative sequences. The case of SCF iteration
-
July
-
P. Pulay, "Convergence acceleration of iterative sequences. The case of SCF iteration," Chem. Phys. Lett., vol. 73, pp. 393-398, July 1980.
-
(1980)
Chem. Phys. Lett
, vol.73
, pp. 393-398
-
-
Pulay, P.1
-
8
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
G. Kresse, and J. Furthmuller, "Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set," Comput. Mat. Science, vol. 6, pp. 15-50, 1996.
-
(1996)
Comput. Mat. Science
, vol.6
, pp. 15-50
-
-
Kresse, G.1
Furthmuller, J.2
-
9
-
-
0037091644
-
Density-functional method for nonequilibrium electron transport
-
Mar
-
M. Brandbyge, J. L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, "Density-functional method for nonequilibrium electron transport," Phys. Rev. B, vol. 65, 165401, Mar. 2002.
-
(2002)
Phys. Rev. B
, vol.65
, pp. 165401
-
-
Brandbyge, M.1
Mozos, J.L.2
Ordejón, P.3
Taylor, J.4
Stokbro, K.5
-
10
-
-
36749030727
-
Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy
-
Nov
-
K. Ritter, and J. Lyding, "Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy," Nanotechnology, vol. 19, 015704, Nov. 2007.
-
(2007)
Nanotechnology
, vol.19
, pp. 015704
-
-
Ritter, K.1
Lyding, J.2
-
11
-
-
38549085884
-
Gate-induced insulating state in bilayer graphene devices
-
Feb
-
J. Oostinga, H. Heersche, X. Liu, A. Morpurgo, and L. Vandersypen, "Gate-induced insulating state in bilayer graphene devices," Nature Materials, vol. 7, pp. 151-157, Feb. 2008.
-
(2008)
Nature Materials
, vol.7
, pp. 151-157
-
-
Oostinga, J.1
Heersche, H.2
Liu, X.3
Morpurgo, A.4
Vandersypen, L.5
-
12
-
-
33847647509
-
Fabrication of n-type nanotube transistors with large-work-function electrodes
-
S. Moon, S. Lee, W. Song, J. Lee, N. Kim, J. Kim, and N. Park, "Fabrication of n-type nanotube transistors with large-work-function electrodes," Appl. Phys. Lett., vol. 90, 092113, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, pp. 092113
-
-
Moon, S.1
Lee, S.2
Song, W.3
Lee, J.4
Kim, N.5
Kim, J.6
Park, N.7
-
13
-
-
18444395554
-
Modulation of the electronic structure of semiconducting nanotubes resulting from different metal contacts
-
P. Tarakeshwar, and D. Kim, "Modulation of the electronic structure of semiconducting nanotubes resulting from different metal contacts," J. Phys. Chem. B, vol. 109, pp. 7601-7604, 2005.
-
(2005)
J. Phys. Chem. B
, vol.109
, pp. 7601-7604
-
-
Tarakeshwar, P.1
Kim, D.2
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