-
2
-
-
0031633245
-
Simulated superior performances of semiconductor superjunction devices
-
T. Fujihira, Y. Miyasaka, "Simulated superior performances of semiconductor superjunction devices," in Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, Jun. 1998, Kyoto Japan, pp. 423-426.
-
Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, Jun. 1998, Kyoto Japan
, pp. 423-426
-
-
Fujihira, T.1
Miyasaka, Y.2
-
3
-
-
0032256942
-
A new generation of high voltage MOSFETs breaks the limit line of silicon
-
G. Deboy, et al., "A new generation of high voltage MOSFETs breaks the limit line of silicon," in Proc. of IEEE International Electron Devices Meeting, Dec. 1998, San Francisco, CA, pp. 683-685.
-
Proc. of IEEE International Electron Devices Meeting, Dec. 1998, San Francisco, CA
, pp. 683-685
-
-
Deboy, G.1
-
4
-
-
0032598936
-
Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
-
P.M. Shenoy, et al., "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET," in Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 1999, Toronto, Ont pp. 99-102.
-
Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 1999, Toronto, Ont
, pp. 99-102
-
-
Shenoy, P.M.1
-
5
-
-
0002140352
-
Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOSFET (STM)
-
T. Minato, et al., "Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOSFET (STM)," in Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 2000, Toulouse, France, pp. 73-76.
-
Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 2000, Toulouse, France
, pp. 73-76
-
-
Minato, T.1
-
6
-
-
0034449069
-
MDmesh™: Innovative technology for high voltage Power MOSFETs
-
M. Saggio, D. Fagone and S. Musumeci, "MDmesh™: innovative technology for high voltage Power MOSFETs," in Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 2000, Toulouse, France, pp. 65-68.
-
Proc. of IEEE International Symposium on Power Semiconductor Devices and ICs, May. 2000, Toulouse, France
, pp. 65-68
-
-
Saggio, M.1
Fagone, D.2
Musumeci, S.3
-
7
-
-
84877736884
-
-
ST's high-voltage power MOSFET roadmap, 2009, ST Micro-electronics. http://www.st.com/stonline/press/news/backgrounders/mdmesh-09.pdf
-
(2009)
ST Micro-electronics
-
-
-
8
-
-
0042026578
-
Semisuperjunction MOSFETs: New design concept for lower on-resistance and softer reverse-recovery body diode
-
Aug.
-
W. Saito, et al., "Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode," IEEE Trans. on Electron Devices, vol. 50, no. 8, pp. 1801-1806, Aug. 2003.
-
(2003)
IEEE Trans. on Electron Devices
, vol.50
, Issue.8
, pp. 1801-1806
-
-
Saito, W.1
-
9
-
-
34748836525
-
Source and load adaptive design for a high-power soft-switching inverter
-
Nov.
-
J.-S. Lai, et al., "Source and load adaptive design for a high-power soft-switching inverter," IEEE Tran. on Power Electronics, vol. 21, no. 6, pp. 1667-1675, Nov. 2006.
-
(2006)
IEEE Tran. on Power Electronics
, vol.21
, Issue.6
, pp. 1667-1675
-
-
Lai, J.-S.1
-
10
-
-
33749516852
-
A synchronous rectification featured soft-switching inverter using CoolMOS
-
J. Zhang and J.-S. Lai, "A synchronous rectification featured soft-switching inverter using CoolMOS," in IEEE Applied Power Electronics Conference and Exposition, Mar. 2006, Dallas, Texas, pp. 19-23.
-
IEEE Applied Power Electronics Conference and Exposition, Mar. 2006, Dallas, Texas
, pp. 19-23
-
-
Zhang, J.1
Lai, J.-S.2
-
11
-
-
77952118857
-
Efficiency design considerations for a wide-range operated high-power soft-switching inverter
-
J.-S. Lai and J. Zhang, "Efficiency design considerations for a wide-range operated high-power soft-switching inverter," in Proc. of IEEE Industrial Electronics Society Annual Conference, Nov. 2005, Raleigh, NC, pp. 1-6.
-
Proc. of IEEE Industrial Electronics Society Annual Conference, Nov. 2005, Raleigh, NC
, pp. 1-6
-
-
Lai, J.-S.1
Zhang, J.2
-
12
-
-
65949099328
-
Variable timing control for wide current range zero-voltage soft-switching inverters
-
J.-S. Lai, W. Yu, and S. Park, "Variable timing control for wide current range zero-voltage soft-switching inverters," in Proc. of IEEE Applied Power Electronics Conference and Exposition, Feb. 2009, Washington DC, pp. 407-412.
-
Proc. of IEEE Applied Power Electronics Conference and Exposition, Feb. 2009, Washington DC
, pp. 407-412
-
-
Lai, J.-S.1
Yu, W.2
Park, S.3
-
13
-
-
0032265816
-
High-voltage MOSFET behavior in soft-switching converters: Analysis and reliability improvements
-
L. Saro, K. Dierberger and R. Redl, "High-voltage MOSFET behavior in soft-switching converters: analysis and reliability improvements," in Prof. of IEEE International Telecommunications Energy Conference, Oct. 1998, San Francisco, CA, pp. 30-40.
-
Prof. of IEEE International Telecommunications Energy Conference, Oct. 1998, San Francisco, CA
, pp. 30-40
-
-
Saro, L.1
Dierberger, K.2
Redl, R.3
-
14
-
-
13344275111
-
Power MOSFET failure mechanisms
-
P. Singh, "Power MOSFET failure mechanisms," in Proc. of IEEE International Telecommunications Energy Conference, Sep. 2004, Chicago, IL, pp. 499-502.
-
Proc. of IEEE International Telecommunications Energy Conference, Sep. 2004, Chicago, IL
, pp. 499-502
-
-
Singh, P.1
-
15
-
-
0035156088
-
Minimization of reverse recovery effects in hard-switched inverters using CoolMOS power switches
-
K. Hongrae, et al., "Minimization of reverse recovery effects in hard-switched inverters using CoolMOS power switches," in Rec. of IEEE Industry Applications Conference, Oct. 2001, Chicago, IL, pp. 641-647.
-
Rec. of IEEE Industry Applications Conference, Oct. 2001, Chicago, IL
, pp. 641-647
-
-
Hongrae, K.1
-
16
-
-
0034790364
-
Characterization of paralleled super junction MOSFET devices under hardand soft-switching conditions
-
X. Huang, et al., "Characterization of paralleled super junction MOSFET devices under hardand soft-switching conditions," in Proc. of IEEE Power Electronics Specialists Conference, Jun. 2001, Vancouver, BC, pp. 2145-2150.
-
Proc. of IEEE Power Electronics Specialists Conference, Jun. 2001, Vancouver, BC
, pp. 2145-2150
-
-
Huang, X.1
-
17
-
-
77952176832
-
-
CoolMOS™, datasheet rev.2.2, Infineon Technologies
-
CoolMOS™, "IPW60R045CP," datasheet rev.2.2, 2008, Infineon Technologies.
-
(2008)
IPW60R045CP
-
-
-
18
-
-
77952161658
-
-
CoolMOS™, datasheet, IXYS Corporation
-
CoolMOS™, "IXKK85N60C," datasheet, 2008, IXYS Corporation.
-
(2008)
IXKK85N60C
-
-
-
19
-
-
77952156982
-
-
MDmesh™, datasheet rev.1, ST Microelectronics
-
MDmesh™, "STW77N65M5," datasheet rev.1, 2009, ST Microelectronics.
-
(2009)
STW77N65M5
-
-
|