SCOPUS 정보 검색 플랫폼

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2001, Pages 641-647

Minimization of reverse recovery effects in hard-switched inverters using CoolMOS" power switches

(3) Kim, H a Jahns, T M a Venkataramanan, G a

a University of Wisconsin Madison (United States)

Author keywords

Converters; Diodes; Power MOSFETs; Power semiconductor switches; Pulse width modulated inverters

Indexed keywords

COMPUTER SIMULATION; DIODES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; INSULATED GATE BIPOLAR TRANSISTORS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR SWITCHES; THERMODYNAMIC PROPERTIES;

ACTIVE CHANNEL FREEWHEELING; COOLMOS POWER SWITCHES; HARD-SWITCHED INVERTER; INTERNAL BODY DIODE; REVERSE RECOVERY EFFECT;

ELECTRIC INVERTERS;

EID: 0035156088 PISSN: 01972618 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (38)

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1
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2
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3
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4
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5
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6
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- Infineon Technologies data sheet, SPW11N60C2
- (1999)

7
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- Practical application of MOSFET synchronous rectifiers
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- Blanc, J.¹

8
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- Power MOSFETs reverse conduction revisited
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- Ferreira, A.¹ Castro Simas, M.I.²

9
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10
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- (1996) Power Semiconductor Devices
- Baliga, B.J.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.