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Journal of Experimental and Theoretical Physics

Volumn 110, Issue 2, 2010, Pages 319-324

Gate-tunable bandgap in bilayer graphene

(1) Falkovsky, L A a,b

a LANDAU INSTITUTE FOR THEORETICAL PHYSICS (Russian Federation)

b INSTITUTE FOR HIGH PRESSURE PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BEHAVIORS; BI-LAYER; DOPING LEVELS; EXPERIMENTAL DATA; GATE BIAS; GATE VOLTAGES; HARTREE ENERGY; SCREENING CONSTANT; TIGHT BINDING MODEL; TUNABLE BAND-GAP;

CARRIER CONCENTRATION; GRAPHENE;

GRAPHITE;

EID: 77952029902 PISSN: 10637761 EISSN: None Source Type: Journal
DOI: 10.1134/S1063776110020159 Document Type: Article

Times cited : (15)

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