Mechanical and electrical properties of carbon nanotube/Cu nanocomposites by molecular-level mixing and controlled oxidation process

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 1, 2010, Pages 78-84

  Lim, Byung K ^a   Mo, Chan B ^a   Nam, Dong H ^a   Hong, Soon H ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Carbon nanotube; Controlled oxidation; Copper; Molecular level mixing; Nanocomposite

Indexed keywords

ANNEALING EFFECTS; BEFORE AND AFTER; CONTROLLED OXIDATION; ELECTRICAL CONDUCTIVITY; FABRICATION TECHNIQUE; HOMOGENEOUS DISPERSIONS; HOT COMPRESSION; MATRIX; MECHANICAL AND ELECTRICAL PROPERTIES; MOLECULAR-LEVEL MIXING; NANOCOMPOSITE POWDER; OXIDATION PROCESS; SPARK PLASMA; YIELD STRENGTH;

ALIGNMENT; CARBON NANOTUBES; ELECTRIC CONDUCTIVITY; MECHANICAL PROPERTIES; MIXING; OXIDATION; OXIDATION RESISTANCE; PROCESS CONTROL; SINTERING; TENSILE TESTING; YIELD STRESS;

NANOCOMPOSITES;

CARBON NANOTUBE; COPPER; METAL NANOPARTICLE; NANOCOMPOSITE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; MECHANICS; OXIDATION REDUCTION REACTION; POWDER; SCANNING ELECTRON MICROSCOPY; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY;

COPPER; ELECTRIC CONDUCTIVITY; MECHANICS; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOCOMPOSITES; NANOTUBES, CARBON; OXIDATION-REDUCTION; POWDERS; TENSILE STRENGTH;

EID: 77951935734     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1521     Document Type: Article

References (18)

1. S. Ijima, Nature 354, 56 (1991).
2. E. W. Wong, P. E. Sheehan, and C. M. Lieber, Science 277, 1971 (1997).
3. M. R. Falvo, G. J. Clary, R. M. Taylor II, V. Chi, F. P. Brooks, Jr., S. Washburn, and R. Superfine, Nature 389, 582 (1997).
4. M. F. Yu, B. S. Files, S. Arepalli, and R. S. Ruoff, Phys. Rev. Lett. 84, 5552 (2000).
5. M. F. Yu, O. Lourie, M. J. Dyer, K. Moloni, T. F. Kelly, and R. S. Ruoff, Science 287, 637 (2000).
6. J. P. Salvetat, A. J. Kulik, J. M. Bonard, G. A. D. Briggs, T. Stockli, K. Metenier, S. Bonnamy, F. Beguin, N. A. Burnham, and L. Forro, Adv. Mater. 11, 161 (1999).
7. S. Berber, Y. K. Kwon, and D. Tomanek, Phys. Rev. Lett. 84, 4613 (2000).
8. P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, Phys. Rev. Lett. 87, 215502 (2001).
9. K. Anazawa, K. Shimotani, C. Manabe, H. Watanabe, and M. Shimizu, Appl. Phys. Lett. 81, 739 (2002).
10. T. Kuzumaki, K. Miyazawa, H. Ichinose, and K. Ito, J. Mater. Res. 13, 2445 (1998).
11. T. Kuzumaki, O. Ujiie, H. Ichinose, and K. Ito, Adv. Eng. Mater. 2, 416 (2000).
12. R. George, K. T. Kashyap, R. Rahul, and S. Yamdagni, Scripta Materiallia 53, 1159 (2005).
13. C. S. Goh, J. Wei, L. C. Lee, and M. Gupta, Nanotechnology 17, 7 (2006).
14. S. I. Cha, K. T. Kim, S. N. Arshad, C. B. Mo, and S. H. Hong, Adv. Mater. 17, 1377 (2005).
15. H. Fehling, Annalen der Chemie und Pharmacie 72, 106 (1849).
16. K. T. Kim, S. I. Cha, T. Gemming, J. Eckert, and S. H. Hong, Small 4, 1936 (2008).
17. H. J. Ryu, S. I. Cha, and S. H. Hong, J. Mater. Res. 18, 2851 (2003).
18. T. W. Ebbesen, H. J. Lezec, H. Hiura, J. W. Bennett, H. F. Ghaemi, and T. Thio, Nature 382, 54 (1996).