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Volumn 96, Issue 16, 2010, Pages

Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high- κ dielectric

(4) Sun, Jie a,b Larsson, Marcus a Maximov, Ivan a Xu, H Q a

a LUND UNIVERSITY (Sweden)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE SENSING; CHARGE SENSORS; CHARGE STABILITY; CHARGE STATE; DOUBLE QUANTUM DOTS; HETEROSTRUCTURES; HONEYCOMB PATTERN; INGAAS/INP; INTEGRATED CHARGE; POLYMER BRIDGES; QUANTUM POINT CONTACT;

CURRENT VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; POINT CONTACTS; PRASEODYMIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SENSORS;

QUANTUM CHEMISTRY;

EID: 77951805865 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3409223 Document Type: Article

Times cited : (9)

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