Room-temperature continuous-wave operation of type-I GaSb-based lasers at 3.1m

Electronics Letters

Volumn 45, Issue 16, 2009, Pages 835-837

  Gupta, J A ^a   Barrios, P J ^a   Aers, G C ^a   Waldron, P ^a   Storey, C ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAASSB; CONTINUOUS WAVE OPERATION; GASB-BASED LASERS; HOLE CONFINEMENT; INGAASSB; INTERBAND LASERS; LOW GROWTH TEMPERATURE; OUTPUT POWER; RIDGE WAVEGUIDE LASERS; ROOM TEMPERATURE; STRAINED QUANTUM WELLS; TEMPERATURE SENSITIVITY; THRESHOLD CURRENTS;

CRYSTAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

CONTINUOUS WAVE LASERS;

EID: 68549125391     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.1717     Document Type: Article

References (8)

1. Grau, M., Lin, C., Dier, O., Lauer, C., and Amann, M.-C.: ' Room-temperature operation of 3.26m GaSb-based type-I lasers with quinternary AlGalnAsSb barriers ', Appl. Phy. Lett., 2005, 87, p. 241104
2. Hosoda, T., Belenky, G., Shterengas, L., Kipshidze, G., and Kisin, M.V.: ' Continuous-wave room temperature operated 3.0m type I GaSb-based lasers with quinternary AlInGaAsSb barriers ', Appl. Phy. Lett., 2008, 92, p. 091106
3. Shterengas, L., Belenky, G., Hosoda, T., Kipshidze, G., and Suchalkin, S.: ' Continuous wave operation of diode lasers at 3.36m at 12°C ', Appl. Phys. Lett., 2008, 93, p. 011103 0003-6951
4. Rattunde, M., Schmitz, J., Kaufel, G., Kelemen, M., Weber, J., and Wagner, J.: ' GaSb-based 2.Xm quantum-well diode lasers with low beam divergence and high output power ', Appl. Phys. Lett., 2006, 88, p. 081115 0003-6951
5. Yang, M.J., Moore, W.J., Yang, C.H., Wilson, R.A., Bennett, B.R., and Shanabrook, B.V.: ' Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry ', J. Appl. Phys., 1999, 85, p. 6632-6635 0021-8979
6. Donati, G.P., Kaspi, R., and Malloy, K.J.: ' Interpolating semiconductor alloy parameters: application to quaternary III-V band gaps ', J. Appl. Phys., 2003, 94, p. 5814-5819, This article has an error in the AlGaAsSb quaternary bowing which is written as 0.0eV when in fact they use -4.53eV. 0021-8979
7. Vurgaftman, I., Meyer, J.R., and Ram-Mohan, L.R.: ' Band parameters for III-V compound semiconductors and their alloys ', J. Appl. Phys., 2001, 89, p. 5815-5875 10.1063/1.1368156 0021-8979
8. Canedy, C.L., Bewley, W.W., Kim, M., Kim, C.S., Nolde, J.A., Larrabee, D.C., Lindle, J.R., Vurgaftman, I., and Meyer, J.R.: ' High-temperature interband cascade lasers emitting at Λ=3.6-4.3m ', Appl. Phys. Lett., 2007, 90, p. 181120 0003-6951